Overview



DRAM is extensively used as the main memory in virtually all computing devices, such as desktop and notebook computers. It is a type of RAM (random access memory), and is the most widely used semiconductor memory used in current generation computers, offering multiple advantages, such as structural simplicity, very high packing densities (number of bytes that can be stored per unit of chip area), low power consumption, and sufficiently high data read/write speeds. Several types of DRAM are presently available for deployment on notebook computers. With rapid developments in semiconductor memory technology, DRAM has demonstrated significant performance enhancements, resulting in a considerable overall performance improvement for the computing segment.

Because of their small sizes, notebook computers require components with the smallest form factors. Specific memory types have thus been developed to fulfill this need. DRAM for notebook computers is available in the form of a SODIMM (small outline dual in-line memory module), which has the smallest footprint and occupies a minimum of board space, yet delivers the same levels of performance as regular a DIMM used in standard desktop computers. DDR, DDR2, and DDR3 memory are available as SODIMM DRAM, and provide different physical designs and pin layouts for ease in visual identification. SODIMM DRAM is available in both buffered and unbuffered versions, and thus can be deployed in notebooks for home/office use as well as server-class machines. SODIMM DRAM also consumes much lower power. The latest generation DDR3 SODIMM operates at significantly low voltages, and is thus used on almost all mobile and battery-powered devices, such as notebook computers and portable media players.




Specification


Technical Description: Samsung M471B5173BH0-YK0 memory module 4 GB 1 x 4 GB DDR3L 204-pin SO-DIMM

Features
Module configuration:
512M x 64
Memory voltage:The voltage (V) of the memory in the device.
1.35 V
Memory ranking:
1
Buffered memory type:
Unregistered (unbuffered)
Memory clock speed:The frequency at which the memory (e.g. RAM) runs.
1600 MHz
CAS latency:Column Address Strobe (CAS) latency, or CL, is the delay time between the moment a memory controller tells the memory module to access a particular memory column on a RAM module, and the moment the data from the given array location is available on the module's output pins. In general, the lower the CAS latency, the better.
11
Memory form factor:Design of the memory e.g. 240-pin DIMM, SO-DIMM.
204-pin SO-DIMM
Component for:What this product is used as a part of (component for).
Laptop
Internal memory type:The type of internal memory such as RAM, GDDR5.
DDR3L
Memory layout (modules x size):
1 x 4 GB
Internal memory:A computer's memory which is directly accessible to the CPU.
4 GB

Operational conditions
Operating temperature (T-T):The minimum and maximum temperatures at which the product can be safely operated.
0 - 85 °C

Weight & dimensions
Height:The measurement of the product from head to foot or from base to top.
30 mm


Product details


M471B5173BH0-YK0 Samsung

Samsung M471B5173BH0-YK0 memory module 4 GB 1 x 4 GB DDR3L 204-pin SO-DIMM

£28.00 and

SKUM471B5173BH0-YK0

Samsung M471B5173BH0-YK0 memory module 4 GB 1 x 4 GB DDR3L 204-pin SO-DIMM

Quick Code: Q765404 MPN: M471B5173BH0-YK0
£28.00

Out of Stock