Main product

Overview


Small outline DIMM
Smaller than normal DIMMs Supports x8 / x16 / up to 2 ranks per DIMM and 2DPC configuration For systems with limited space issues Application : Laptop




Specification

Technical Description: Samsung M471A1K43EB1-CWE memory module 8 GB 1 x 8 GB DDR4 260-pin SO-DIMM
Features
Module configuration:
1024M x 8
Memory voltage:The voltage (V) of the memory in the device.
1.2 V
Buffered memory type:
Unregistered (unbuffered)
Memory clock speed:The frequency at which the memory (e.g. RAM) runs.
3200 MHz
CAS latency:Column Address Strobe (CAS) latency, or CL, is the delay time between the moment a memory controller tells the memory module to access a particular memory column on a RAM module, and the moment the data from the given array location is available on the module's output pins. In general, the lower the CAS latency, the better.
21
ECC:ECC means Error Correction Code, and it is memory that is able to detect and correct some memory errors without user intervention.
No
Memory form factor:Design of the memory e.g. 240-pin DIMM, SO-DIMM.
260-pin SO-DIMM
Component for:What this product is used as a part of (component for).
Laptop
Internal memory type:The type of internal memory such as RAM, GDDR5.
DDR4
Memory layout (modules x size):
1 x 8 GB
Internal memory:A computer's memory which is directly accessible to the CPU.
8 GB

General
Type:Characteristics of the device.
Memory RAM

Product details

M471A1K43EB1-CWE Samsung 5715063113233

Samsung M471A1K43EB1-CWE memory module 8 GB 1 x 8 GB DDR4 260-pin SO-DIMM

£38.99 and

SKU: M471A1K43EB1-CWE

Samsung M471A1K43EB1-CWE memory module 8 GB 1 x 8 GB DDR4 260-pin SO-DIMM

Quick Code: Q490714 MPN: M471A1K43EB1-CWE
£38.99

Out of Stock