Main product

Overview


Unbuffered DIMM
No buffer or register : smaller latency value Supports x8 / x16 Organization / up to 2 ranks per DIMM and 2DPC configuration Application : Desktop




Specification

Technical Description:

Features
Module configuration:
1024M x 16
Memory voltage:The voltage (V) of the memory in the device.
1.1 V
Memory clock speed:The frequency at which the memory (e.g. RAM) runs.
4800 MHz
CAS latency:Column Address Strobe (CAS) latency, or CL, is the delay time between the moment a memory controller tells the memory module to access a particular memory column on a RAM module, and the moment the data from the given array location is available on the module's output pins. In general, the lower the CAS latency, the better.
40
ECC:ECC means Error Correction Code, and it is memory that is able to detect and correct some memory errors without user intervention.
No
Memory form factor:Design of the memory e.g. 240-pin DIMM, SO-DIMM.
288-pin DIMM
Component for:What this product is used as a part of (component for).
PC
Internal memory type:The type of internal memory such as RAM, GDDR5.
DDR5
Memory layout (modules x size):
1 x 8 GB
Internal memory:A computer's memory which is directly accessible to the CPU.
8 GB
Buffered memory type:
Unregistered (unbuffered)

General
Type:Characteristics of the device.
Memory RAM

Other features
Chips organisation:
1Rx16

Product details

M323R1GB4BB0-CQK-XGX Samsung

£0.00 and

SKU: M323R1GB4BB0-CQK-XGX


Parent Product

M323R1GB4BB0-CQK Samsung


MPN: M323R1GB4BB0-CQK

Quick Code: Q MPN: M323R1GB4BB0-CQK-XGX
£0.00

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