Main product

Overview


ValueRAM's KVR32N22S8/8 is a 1G x 64-bit (8GB) DDR4-3200 CL22 SDRAM (Synchronous DRAM), 1Rx8, memory module, based on eight 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-3200 timing of 22-22-22 at 1.2V. Each 288-pin DIMM uses gold contact fingers.




At-a-glance


  • 16 internal banks; 4 groups of 4 banks each

  • Data bus inversion (DBI) for data bus

  • Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)

  • Fly-by topology

  • Low-power auto self refresh (LPASR)

  • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals

  • On-board I2 serial presence-detect (SPD) EEPROM

  • On-die VREFDQ generation and calibration

  • RoHS Compliant and Halogen-Free

  • Selectable BC4 or BL8 on-the-fly (OTF)

  • Single-rank

  • Terminated control command and address bus




Reasons to buy

  • 16 internal banks; 4 groups of 4 banks each
  • Data bus inversion (DBI) for data bus
  • Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
  • Fly-by topology
  • Low-power auto self refresh (LPASR)
  • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
  • On-board I2 serial presence-detect (SPD) EEPROM
  • On-die VREFDQ generation and calibration
  • RoHS Compliant and Halogen-Free
  • Selectable BC4 or BL8 on-the-fly (OTF)
  • Single-rank
  • Terminated control command and address bus

Specification

Technical Description: Kingston Technology ValueRAM KVR32N22S8/8 memory module 8 GB 1 x 8 GB DDR4 3200 MHz
Features
JEDEC standard:
Yes
Lead plating:
Gold
Country of origin:Country where the device is made.
Taiwan
Programming power voltage (VPP):
2.5 V
Row active time:
32 ns
Refresh row cycle time:
350 ns
Row cycle time:
45.75 ns
Module configuration:
1024M x 64
Memory voltage:The voltage (V) of the memory in the device.
1.2 V
Memory ranking:
1
CAS latency:Column Address Strobe (CAS) latency, or CL, is the delay time between the moment a memory controller tells the memory module to access a particular memory column on a RAM module, and the moment the data from the given array location is available on the module's output pins. In general, the lower the CAS latency, the better.
22
ECC:ECC means Error Correction Code, and it is memory that is able to detect and correct some memory errors without user intervention.
No
Memory form factor:Design of the memory e.g. 240-pin DIMM, SO-DIMM.
288-pin DIMM
Component for:What this product is used as a part of (component for).
PC/Server
Memory clock speed:The frequency at which the memory (e.g. RAM) runs.
3200 MHz
Internal memory type:The type of internal memory such as RAM, GDDR5.
DDR4
Memory layout (modules x size):
1 x 8 GB
Internal memory:A computer's memory which is directly accessible to the CPU.
8 GB
Buffered memory type:
Unregistered (unbuffered)

General
Type:Characteristics of the device.
Memory RAM

Logistics data
Harmonized System (HS) code:
84733020

Operational conditions
Storage temperature (T-T):The minimum and maximum temperatures at which the product can be safely stored.
-55 - 100 °C
Operating temperature (T-T):The minimum and maximum temperatures at which the product can be safely operated.
0 - 85 °C

Sustainability
Doesn't contain:
Halogen

Technical details
Compliance certificates:
RoHS

Weight & dimensions
Height:The measurement of the product from head to foot or from base to top.
31.2 mm
Width:The measurement or extent of something from side to side.
133.3 mm

Product details

KVR32N22S8/8 Kingston 0740617296068

Kingston Technology ValueRAM KVR32N22S8/8 memory module 8 GB 1 x 8 GB DDR4 3200 MHz

£25.00 and In stock

SKU: KVR32N22S8/8

Kingston Technology ValueRAM KVR32N22S8/8 memory module 8 GB 1 x 8 GB DDR4 3200 MHz

Quick Code: Q201956 MPN: KVR32N22S8/8
£25.00

Quantity:
In Stock

Key Features

  • Low-power auto self refresh (LPASR)
  • Data bus inversion (DBI) for data bus
  • On-die VREFDQ generation and calibration
  • Single-rank
  • On-board I2 serial presence-detect (SPD) EEPROM
  • 16 internal banks; 4 groups of 4 banks each