Main product

Overview


Rebirth of the Legendary AMD Performance Series
Designed for the latest AMD Ryzen™ Threadripper™ processor, the Flare X series DDR4 memory kit marks the return of the legendary Flare memory that provided awesome performance in the previous generation of DDR memory. Upgrade your next AMD system into the ultimate gaming rig or a powerful workstation with the Flare X series DDR4 memory!

Designed for AMD Platforms
Returning from the ashes, the new AMD architecture features a completely different set of memory enhancements, requiring a new approach. The Flare X memory series is designed with a distinct characteristic to optimize compatibility with the latest AMD Ryzen™ Threadripper™ platform.

Faster Transfer Speed
Available in memory speeds starting from DDR4-2133MHz, the Flare X series delivers high speed memory performance to efficiently transfer data for each of the cores on the AMD Ryzen™ Threadripper™ processor.

Experience Performance
Each and every single Flare X memory kit is tested under G.SKILL’s rigorous testing process to ensure the best performance, compatibility, and stability on your AMD system.




At-a-glance


  • Designed with a low voltage of 1.2V~1.35V at DDR4 standard, this lowers the memory voltage requirement by 20% from DDR3 memory kits! Now your system can perform even faster without becoming an expensive appliance heater.




Reasons to buy

  • Designed with a low voltage of 1.2V~1.35V at DDR4 standard, this lowers the memory voltage requirement by 20% from DDR3 memory kits! Now your system can perform even faster without becoming an expensive appliance heater.

Specification

Technical Description: G.Skill DDR4 Memory RAM - 32GB
Features
Country of origin:Country where the device is made.
Taiwan
Intel Extreme Memory Profile (XMP):
Yes
Row active time:
34 ns
Refresh row cycle time:
14 ns
Row cycle time:
14 ns
Memory voltage:The voltage (V) of the memory in the device.
1.35 V
Memory clock speed:The frequency at which the memory (e.g. RAM) runs.
3200 MHz
CAS latency:Column Address Strobe (CAS) latency, or CL, is the delay time between the moment a memory controller tells the memory module to access a particular memory column on a RAM module, and the moment the data from the given array location is available on the module's output pins. In general, the lower the CAS latency, the better.
14
ECC:ECC means Error Correction Code, and it is memory that is able to detect and correct some memory errors without user intervention.
No
Memory form factor:Design of the memory e.g. 240-pin DIMM, SO-DIMM.
288-pin DIMM
Component for:What this product is used as a part of (component for).
PC/Server
Internal memory type:The type of internal memory such as RAM, GDDR5.
DDR4
Memory layout (modules x size):
4 x 8 GB
Internal memory:A computer's memory which is directly accessible to the CPU.
32 GB

Logistics data
Harmonized System (HS) code:
84733020

Weight & dimensions
Height:The measurement of the product from head to foot or from base to top.
40 mm

Product details

F4-3200C14Q-32GFX G.Skill 4719692016324

G.Skill DDR4 Memory RAM - 32GB

£211.99 and

SKU: F4-3200C14Q-32GFX

G.Skill DDR4 Memory RAM - 32GB

Quick Code: Q1580484 MPN: F4-3200C14Q-32GFX
£211.99

Out of Stock