Features
Module configuration:
512M x 64
Memory voltage:The voltage (V) of the memory in the device.
1.2 V
CAS latency:Column Address Strobe (CAS) latency, or CL, is the delay time between the moment a memory controller tells the memory module to access a particular memory column on a RAM module, and the moment the data from the given array location is available on the module's output pins. In general, the lower the CAS latency, the better.
17
ECC:ECC means Error Correction Code, and it is memory that is able to detect and correct some memory errors without user intervention.
Memory form factor:Design of the memory e.g. 240-pin DIMM, SO-DIMM.
260-pin SO-DIMM
Component for:What this product is used as a part of (component for).
Laptop
Memory clock speed:The frequency at which the memory (e.g. RAM) runs.
2400 MHz
Internal memory type:The type of internal memory such as RAM, GDDR5.
DDR4
Memory layout (modules x size):
1 x 4 GB
Internal memory:A computer's memory which is directly accessible to the CPU.
4 GB
Buffered memory type:
Unregistered (unbuffered)
General
Type:Characteristics of the device.
Memory RAM
Logistics data
Harmonized System (HS) code:
84733020
Other features
Bandwidth:Bandwidth is the difference between the upper and lower frequencies in a continuous set of frequencies. It is typically measured in Hertz (Hz). A key characteristic of bandwidth is that any band of a given width can carry the same amount of information, regardless of where that band is located in the frequency spectrum. For example, a 3 kHz band can carry a telephone conversation whether that band is at baseband (as in a POTS telephone line) or modulated to some higher frequency.
19200 MB/s
Weight & dimensions
Height:The measurement of the product from head to foot or from base to top.
30 mm
Width:The measurement or extent of something from side to side.
69.6 mm
