Overview



Unbuffered DIMM
No buffer or register : smaller latency value Supports x8 / x16 Organization / up to 2 ranks per DIMM and 2DPC configuration Application : Desktop




Specification


Technical Description:

Features
Module configuration:
2048M x 8
Memory voltage:The voltage (V) of the memory in the device.
1.1 V
Memory clock speed:The frequency at which the memory (e.g. RAM) runs.
4800 MHz
CAS latency:Column Address Strobe (CAS) latency, or CL, is the delay time between the moment a memory controller tells the memory module to access a particular memory column on a RAM module, and the moment the data from the given array location is available on the module's output pins. In general, the lower the CAS latency, the better.
40
Memory form factor:Design of the memory e.g. 240-pin DIMM, SO-DIMM.
288-pin DIMM
Component for:What this product is used as a part of (component for).
PC
Internal memory type:The type of internal memory such as RAM, GDDR5.
DDR5
Memory layout (modules x size):
1 x 16 GB
Internal memory:A computer's memory which is directly accessible to the CPU.
16 GB
Buffered memory type:
Unregistered (unbuffered)

Other features
Chips organisation:
1Rx8


Product details


5059902031105-XEX Samsung

£0.00 and

SKU5059902031105-XEX


Parent Product

M323R2GA3BB0-CQK Samsung


MPN: M323R2GA3BB0-CQK

Quick Code: Q MPN: 5059902031105-XEX
£0.00

Out of Stock